VLSI

3 Novel Capacitor-Less A2RAM Memory Cells for Beyond 22-nm Nodes

Noel Rodríguez and Francisco Gamiz

Contents

3.1 Introduction

3.2 Multibody Floating-Body-1T-Dynamic Random-Access Memory

3.3 A2RAM Memory Concept and Fabrication

3.4 Experimental Electrical Results

3.5 Tridimensional A2RAM: FinFET, Tri-Gate, and Nanowire A2RAM

3.6 Conclusions

References

3.1 Introduction

The semiconductor industry is facing a period where the survival of mature technologies is being questioned. Short-channel effects, leakage, and variability are suited as insurmountable obstacles that standard metal–oxide–semiconductor field-effect transistor (MOSFET) would not be able to overcome in the ultimate nodes. In the case of the memory field, the situation is analogous. ...