Nanoelectronic Device Applications Handbook

2	Comparative Analysis of Mobility and Dopant Number Fluctuation Models for the Threshold Voltage Fluctuation Estimation in 45 nm Channel Length MOSFET Device Nabil Ashraf, Dragica Vasileska, Gilson Wirth, and Purushothaman Srinivasan

CONTENTS

2.1    Introduction

2.2    Theoretical Model

2.3    Description of the Analytical Models

2.3.1    Number Fluctuation-Based Model

2.3.2    Percolation-Based Analytical Model

2.3.3    Newly Proposed Mobility Fluctuation-Based Analytical Model with Inherent Number Fluctuation from Dopants

2.4    Simulation Results

References

2.1    INTRODUCTION

In very small electronic devices, the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO₂ of a MOSFET (metal–oxide–semiconductor ...