Metallic Spintronic Devices

3

 

The Prospect of STT-RAM Scaling

 

Yaojun Zhang, Wujie Wen, Hai Li and Yiran Chen

Department of Electric and Computer Engineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania

CONTENTS

3.1 Introduction

3.2 Preliminary

3.2.1 Basic MTJ Structure

3.2.2 MLC MTJ

3.2.3 Variability Sources in STT-RAM Designs

3.2.3.1 Process Variations

3.2.3.2 Thermal Fluctuations

3.3 SLC STT-RAM Reading Performance with Technology Scaling

3.3.1 Switching Performance and Reading Disturbance

3.3.2 Reading Sensing Margin

3.4 Simulation and Discussion of SLC STT-RAM

3.4.1 Simulation Setup

3.4.2 Reading Operation Error Analysis

3.4.2.1 Sensing Error

3.4.2.2 Reading Disturbance

3.4.3 Optimize Discussion

3.5 Readability Analysis of ...