Metallic Spintronic Devices

2

 

Spin-Transfer-Torque MRAM: Device Architecture and Modeling

 

Xiaochun Zhu and Seung H. Kang

Qualcomm Technologies Incorporated, San Diego, California

CONTENTS

2.1 Introduction

2.2 Basic Device Concepts

2.2.1 Magnetic Tunnel Junction (MTJ)

2.2.2 Tunnel Magnetoresistance

2.2.3 Energy Barrier

2.2.4 STT Switching

2.2.4.1 Background

2.2.4.2 Switching Current: Phenomenological Description

2.2.4.3 Interface Anisotropy

2.2.5 Perpendicular Magnetic Anisotropy MTJ

2.3 Device

2.3.1 Bitcell and Array

2.3.2 High-Density Array Architecture

2.3.3 Bitcells for Enhanced Writability

2.3.3.1 Mitigating Switching Current Asymmetry

2.3.3.2 2T-1MTJ Bitcell

2.3.4 Tuning MTJ Attributes

2.3.4.1 MTJ Resistance

2.3.4.2 MTJ Write Speed

2.3.4.3 Effective TMR

2.3.4.4 ...