6.4 The Metal–Insulator–Semiconductor Fet
One of the most widely used electronic devices, particularly in digital integrated circuits, is the metal–insulator–semiconductor (MIS) transistor. In this device the channel current is controlled by a voltage applied at a gate electrode that is isolated from the channel by an insulator. The resulting device may be referred to generically as an insulated-gate field-effect transistor (IGFET). However, since most such devices are made using silicon for the semiconductor, SiO2 or other oxides for the insulator, and metal or heavily doped polysilicon for the gate electrode, the term MOS field-effect transistor (MOSFET) is commonly used.
6.4.1 Basic Operation and Fabrication
The basic MOS transistor is illustrated ...
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