Solid State Electronic Devices, 7th Edition

Chapter 6 Field-Effect Transistors

Objectives

1. Derive I–​V characteristics of JFETs, MESFETs, and HEMTs

2. Determine MOS C–​V behavior and threshold voltage; study leakage characteristics of gate dielectrics

3. Understand MOSFET band diagrams, and linear and saturation behavior

4. Understand “effective” channel mobility, body effect, and subthreshold slopes

5. Analyze second-order effects—​DIBL, GIDL, charge sharing, and V_T roll-off

The modern era of semiconductor electronics was ushered in by the invention of the bipolar transistor in 1948 by Bardeen, Brattain, and Shockley at the Bell Telephone Laboratories. This device, along with its field-effect counterpart, has had an enormous impact on virtually every area of modern life. In this chapter we will ...