SiGe, GaAs, and InP Heterojunction Bipolar Transistors

CHAPTER SIX

Heterojunction Device Simulation

Device simulation provides the ability to perform computer simulation experiments without using semiconductor wafers. The simulation is transparent to semiconductor technologies and independent of expensive fabrication equipment. The use of device simulation also provides physical insight into device operation for model development and reduces the design cycle for new transistor design. Figure 6.1 shows the flowchart of device and circuit design using device simulation. For example, device physics provides analytical equations and physical parameters for device simulation. The device simulator solves the fundamental semiconductor equations numerically. The dc, ac, and transient simulation results are used for device design and device model development. The device model is implemented in the circuit simulator. The circuit simulation results are then used for the design of integrated circuits. A more detailed flowchart is illustrated in Fig. 6.2, which demonstrates the relationship of device, process, and circuit simulation in technology CAD. The semiconductor process time, temperature, dopants, and so on, are specified in a two-dimensional process simulator such as SUPREM IV [1]. The process simulation produces the doping profile in two dimensions. This doping profile is loaded into a two-dimensional device simulator such as MEDICI [2]. The device simulation generates I–V and C–V data of semiconductor devices. Using a parameter extraction ...