Abbreviation Glossary
AC | Alternating Current |
ACPR | Adjacent Channel Power Ratio |
ADP | Ammonium dihydrogen phosphate |
ADS | Advanced Design System |
AlGaAs | Aluminum gallium arsenide |
AM | Amplitude Modulation |
AM-DD | Amplitude Modulation — Direct Detection |
ASE | Amplified Spontaneous Emission |
BER | Bit Error Rate |
BH | Buried Heterostructure |
BiCMOS | Bipolar Complementary Metal Oxide Semiconductor |
BILBAO | Borne d’infrastructures large bande avec accès optique (Wideband infrastructure base with optical access) |
CAD | Computer-aided design |
CdS | Cadmium sulfide |
CEA-Leti | Commissariat à l’énergie atomique (Atomic energy commission) |
CMOS | Complementary metal-oxide-semiconductor |
CNAM | Conservatoire national des arts et métiers |
CPW | Coplanar waveguide |
DBR | Distributed Bragg reflector |
DC | Direct current |
DD-MZM | Dual drive-MZM |
DFA | Doped fiber amplifier |
DFB | Distributed feedback laser |
DFT | Discrete Fourier transform |
E/O | Electric/optic |
EAM | Electro-absorption modulator |
EDFA | Erbium-doped fiber amplifier |
EEL | Edge emitting laser |
EML | Electro-absorption modulated laser |
EMT | Electromagnetic transverse |
EOM | Electro-optic modulator |
ER | Extinction ratio |
ESYCOM | Equipe systèmes de communications et microsystèmes (Communications and microsystems team) |
ET | Electric transverse |
EVM | Error vector magnitude |
FCC | Federal communications commission |
FET | Field-effect transistor |
FKE | Franz-Keldysh effect |
FT R&D | France Telecom Research & Development |
GaAs | Galium arsenide ... |
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