10 GaN Devices, an Introduction
Strictly speaking, GaN power devices are not considered integrated power devices even though high electron mobility transistors (HEMTs) have a lateral current flow path similar to that of LDMOS. However, researchers [199] [200] have already started exploring the possibility of using gallium nitride (GaN) for smart power IC. It is therefore useful to give readers an introduction to this topic, especially since many people in the field are familiar only with silicon.
10.1 Compound Materials Versus Silicon
Silicon has been the dominant material for power semiconductor devices for many years. Given the economies of scale due to existing infrastructure, mature technology, and innovative structures and devices like ...
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