Gallium Nitride (GaN)

Gallium Nitride (GaN)

by Farid Medjdoub
Released December 2017
Publisher(s): CRC Press
ISBN: 9781482220049

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Book description

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low, making it a suitable material for solar cell arrays for satellites. This book covers GaN from the fundamental physics to the fabrication of devices and circuits that are already foreseen to replace standard silicon or gallium arsenide (GaAs) in many applications.

Table of contents

  1. Front Cover (1/2)
  2. Front Cover (2/2)
  3. Contents
  4. Preface
  5. Editors
  6. Contributors
  7. Chapter 1: GaN High-Voltage Power Devices (1/9)
  8. Chapter 1: GaN High-Voltage Power Devices (2/9)
  9. Chapter 1: GaN High-Voltage Power Devices (3/9)
  10. Chapter 1: GaN High-Voltage Power Devices (4/9)
  11. Chapter 1: GaN High-Voltage Power Devices (5/9)
  12. Chapter 1: GaN High-Voltage Power Devices (6/9)
  13. Chapter 1: GaN High-Voltage Power Devices (7/9)
  14. Chapter 1: GaN High-Voltage Power Devices (8/9)
  15. Chapter 1: GaN High-Voltage Power Devices (9/9)
  16. Chapter 2: AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy (1/4)
  17. Chapter 2: AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy (2/4)
  18. Chapter 2: AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy (3/4)
  19. Chapter 2: AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy (4/4)
  20. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (1/10)
  21. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (2/10)
  22. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (3/10)
  23. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (4/10)
  24. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (5/10)
  25. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (6/10)
  26. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (7/10)
  27. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (8/10)
  28. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (9/10)
  29. Chapter 3: Gallium Nitride Transistors on Large-Diameter Si(111) Substrate (10/10)
  30. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (1/7)
  31. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (2/7)
  32. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (3/7)
  33. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (4/7)
  34. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (5/7)
  35. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (6/7)
  36. Chapter 4: GaN-HEMT Scaling Technologies for High Frequency Radio Frequency and Mixed Signal Applications (7/7)
  37. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (1/13)
  38. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (2/13)
  39. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (3/13)
  40. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (4/13)
  41. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (5/13)
  42. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (6/13)
  43. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (7/13)
  44. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (8/13)
  45. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (9/13)
  46. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (10/13)
  47. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (11/13)
  48. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (12/13)
  49. Chapter 5: Group III-Nitride Microwave Monolithically Integrated Circuits (13/13)
  50. Chapter 6: GaN-Based Metal/ Insulator/SemiconductorType Schottky Hydrogen Sensors (1/5)
  51. Chapter 6: GaN-Based Metal/ Insulator/SemiconductorType Schottky Hydrogen Sensors (2/5)
  52. Chapter 6: GaN-Based Metal/ Insulator/SemiconductorType Schottky Hydrogen Sensors (3/5)
  53. Chapter 6: GaN-Based Metal/ Insulator/SemiconductorType Schottky Hydrogen Sensors (4/5)
  54. Chapter 6: GaN-Based Metal/ Insulator/SemiconductorType Schottky Hydrogen Sensors (5/5)
  55. Chapter 7: InGaN-Based Solar Cells (1/6)
  56. Chapter 7: InGaN-Based Solar Cells (2/6)
  57. Chapter 7: InGaN-Based Solar Cells (3/6)
  58. Chapter 7: InGaN-Based Solar Cells (4/6)
  59. Chapter 7: InGaN-Based Solar Cells (5/6)
  60. Chapter 7: InGaN-Based Solar Cells (6/6)
  61. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (1/10)
  62. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (2/10)
  63. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (3/10)
  64. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (4/10)
  65. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (5/10)
  66. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (6/10)
  67. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (7/10)
  68. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (8/10)
  69. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (9/10)
  70. Chapter 8: III-Nitride Semiconductors: New Infrared Intersubband Technologies (10/10)
  71. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (1/6)
  72. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (2/6)
  73. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (3/6)
  74. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (4/6)
  75. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (5/6)
  76. Chapter 9: Gallium Nitride-Based Interband Tunnel Junctions (6/6)
  77. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (1/8)
  78. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (2/8)
  79. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (3/8)
  80. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (4/8)
  81. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (5/8)
  82. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (6/8)
  83. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (7/8)
  84. Chapter 10: Trapping and Degradation Mechanisms in GaN-Based HEMTs (8/8)
  85. Back Cover

Product information

  • Title: Gallium Nitride (GaN)
  • Author(s): Farid Medjdoub
  • Release date: December 2017
  • Publisher(s): CRC Press
  • ISBN: 9781482220049