Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy

Part II

Electronic Devices and Systems

2 Electronic Devices and Systems

Although silicon is undoubtedly still full of steam, the word “post-CMOS” has become a commonplace. With the end of the CMOS-scaling evolution in sight, no one at the FTM seemed to be in the panic mode. Perhaps, instead of seeing the end of a profession based on near-perfection in precision engineering, the FTM researchers see great opportunities opening up in front. Indeed, a number of fascinating concepts were discussed, from Mott transistors to hybrid superconductor-CMOS memory. Limits of the current memory technologies and prospects of alternative memory mechanisms were analyzed. Alternative engineering and system strategies, such as token-passing architectures and electron mass engineering, were examined, often from refreshing perspectives such as energy efficiency and info-carrying distance, etc.

As often is the case, new technologies are enabled by discoveries and advances in materials. The big-brother silicon is clearly pressed (at least in terms of the conference publicity) by its much nimbler sibling carbon. Germanium is another column-IV element that is challenging silicon at its own game, while away from column-IV materials, chalcogenide glassy semiconductors were proposed for memory applications.

Contributors

2.1   F. Balestra

2.2   P. M. Solomon

2.3   W. Van Den Daele, S. Cristoloveanu, E. Augendre, С. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky

2.4   Enrico Sangiorgi, Marco Braccioli, ...