Electronic Packaging Science and Technology

Electronic Packaging Science and Technology

by King-Ning Tu, Chih Chen, Hung-Ming Chen
Released December 2021
Publisher(s): Wiley
ISBN: 9781119418313

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Book description

Must-have reference on electronic packaging technology!

The electronics industry is shifting towards system packaging technology due to the need for higher chip circuit density without increasing production costs.  Electronic packaging, or circuit integration, is seen as a necessary strategy to achieve a performance growth of electronic circuitry in next-generation electronics. With the implementation of novel materials with specific and tunable electrical and magnetic properties, electronic packaging is highly attractive as a solution to achieve denser levels of circuit integration.

The first part of the book gives an overview of electronic packaging and provides the reader with the fundamentals of the most important packaging techniques such as wire bonding, tap automatic bonding, flip chip solder joint bonding, microbump bonding, and low temperature direct Cu-to-Cu bonding. Part two consists of concepts of electronic circuit design and its role in low power devices, biomedical devices, and circuit integration. The last part of the book contains topics based on the science of electronic packaging and the reliability of packaging technology.

 

Table of contents

  1. Cover
  2. Title Page
  3. Copyright Page
  4. Preface
  5. 1 Introduction
    1. 1.1 Introduction
    2. 1.2 Impact of Moore’s Law on Si Technology
    3. 1.3 5G Technology and AI Applications
    4. 1.4 3D IC Packaging Technology
    5. 1.5 Reliability Science and Engineering
    6. 1.6 The Future of Electronic Packaging Technology
    7. 1.7 Outline of the Book
    8. References
  6. Part I:
    1. 2 Cu‐to‐Cu and Other Bonding Technologies in Electronic Packaging
      1. 2.1 Introduction
      2. 2.2 Wire Bonding
      3. 2.3 Tape‐Automated Bonding
      4. 2.4 Flip‐Chip Solder Joint Bonding
      5. 2.5 Micro‐Bump Bonding
      6. 2.6 Cu‐to‐Cu Direct Bonding
      7. 2.7 Hybrid Bonding
      8. 2.8 Reliability – Electromigration and Temperature Cycling Tests
      9. Problems
      10. References
    2. 3 Randomly‐Oriented and (111) Uni‐directionally‐Oriented Nanotwin Copper
      1. 3.1 Introduction
      2. 3.2 Formation Mechanism of Nanotwin Cu
      3. 3.3 In Situ Measurement of Stress Evolution During Nanotwin Deposition
      4. 3.4 Electrodeposition of Randomly Oriented Nanotwinned Copper
      5. 3.5 Formation of Unidirectionally (111)‐oriented Nanotwin Copper
      6. 3.6 Grain Growth in [111]‐Oriented nt‐Cu
      7. 3.7 Uni‐directional Growth of η‐Cu6Sn5 in Microbumps on (111) Oriented nt‐Cu
      8. 3.8 Low Thermal‐Budget Cu‐to‐Cu Bonding Using [111]‐Oriented nt‐Cu
      9. 3.9 Nanotwin Cu RDL for Fanout Package and 3D IC Integration
      10. Problems
      11. References
    3. 4 Solid–Liquid Interfacial Diffusion Reaction (SLID) Between Copper and Solder
      1. 4.1 Introduction
      2. 4.2 Kinetics of Scallop‐Type IMC Growth in SLID
      3. 4.3 A Simple Model for the Growth of Mono‐Size Hemispheres
      4. 4.4 Theory of Flux‐Driven Ripening
      5. 4.5 Measurement of the Nano‐channel Width Between Two Scallops
      6. 4.6 Extremely Rapid Grain Growth in Scallop‐Type Cu6Sn5 in SLID
      7. Problems
      8. References
    4. 5 Solid‐State Reactions Between Copper and Solder
      1. 5.1 Introduction
      2. 5.2 Layer‐Type Growth of IMC in Solid‐State Reactions
      3. 5.3 Wagner Diffusivity
      4. 5.4 Kirkendall Void Formation in Cu3Sn
      5. 5.5 Sidewall Reaction to Form Porous Cu3Sn in μ‐Bumps
      6. 5.6 Effect of Surface Diffusion on IMC Formation in Pillar‐Type μ‐Bumps
      7. Problems
      8. References
  7. Part II:
    1. 6 Essence of Integrated Circuits and Packaging Design
      1. 6.1 Introduction
      2. 6.2 Transistor and Interconnect Scaling
      3. 6.3 Circuit Design and LSI
      4. 6.4 System‐on‐Chip (SoC) and Multicore Architectures
      5. 6.5 System‐in‐Package (SiP) and Package Technology Evolution
      6. 6.6 3D IC Integration and 3D Silicon Integration
      7. 6.7 Heterogeneous Integration: An Introduction
      8. Problems
      9. References
    2. 7 Performance, Power, Thermal, and Reliability
      1. 7.1 Introduction
      2. 7.2 Field‐Effect Transistor and Memory Basics
      3. 7.3 Performance: A Race in Early IC Design
      4. 7.4 Trend in Low Power
      5. 7.5 Trade‐off between Performance and Power
      6. 7.6 Power Delivery and Clock Distribution Networks
      7. 7.7 Low‐Power Design Architectures
      8. 7.8 Thermal Problems in IC and Package
      9. 7.9 Signal Integrity and Power Integrity (SI/PI)
      10. 7.10 Robustness: Reliability and Variability
      11. Problems
      12. References
    3. 8 2.5D/3D System‐in‐Packaging Integration
      1. 8.1 Introduction
      2. 8.2 2.5D IC: Redistribution Layer (RDL) and TSV‐Interposer
      3. 8.3 2.5D IC: Silicon, Glass, and Organic Substrates
      4. 8.4 2.5D IC: HBM on Silicon Interposer
      5. 8.5 3D IC: Memory Bandwidth Challenge for High‐Performance Computing
      6. 8.6 3D IC: Electrical and Thermal TSVs
      7. 8.7 3D IC: 3D‐Stacked Memory and Integrated Memory Controller
      8. 8.8 Innovative Packaging for Modern Chips/Chiplets
      9. 8.9 Power Distribution for 3D IC Integration
      10. 8.10 Challenge and Trend
      11. Problems
      12. References
  8. Part III:
    1. 9 Irreversible Processes in Electronic Packaging Technology
      1. 9.1 Introduction
      2. 9.2 Flow in Open Systems
      3. 9.3 Entropy Production
      4. 9.4 Cross‐Effects in Irreversible Processes
      5. 9.5 Cross‐Effect Between Atomic Diffusion and Electrical Conduction
      6. 9.6 Irreversible Processes in Thermomigration
      7. 9.7 Cross‐Effect Between Heat Conduction and Electrical Conduction
      8. Problems
      9. References
    2. 10 Electromigration
      1. 10.1 Introduction
      2. 10.2 To Compare the Parameters in Atomic Diffusion and Electric Conduction
      3. 10.3 Basic of Electromigration
      4. 10.4 Current Crowding and Electromigration in 3‐Dimensional Circuits
      5. 10.5 Joule Heating and Heat Dissipation
      6. Problems
      7. References
    3. 11 Thermomigration
      1. 11.1 Introduction
      2. 11.2 Driving Force of Thermomigration
      3. 11.3 Analysis of Heat of Transport, Q*
      4. 11.4 Thermomigration Due to Heat Transfer Between Neighboring Pairs of Powered and Unpowered Solder Joints
      5. Problems
      6. References
    4. 12 Stress‐Migration
      1. 12.1 Introduction
      2. 12.2 Chemical Potential in a Stressed Solid
      3. 12.3 Stoney’s Equation of Biaxial Stress in Thin Films
      4. 12.4 Diffusional Creep
      5. 12.5 Spontaneous Sn Whisker Growth at Room Temperature
      6. 12.6 Comparison of Driving Forces Among Electromigration, Thermomigration, and Stress‐Migration
      7. Problems
      8. References
    5. 13 Failure Analysis
      1. 13.1 Introduction
      2. 13.2 Microstructure Change with or Without Lattice Shift
      3. 13.3 Statistical Analysis of Failure
      4. 13.4 A Unified Model of MTTF for Electromigration, Thermomigration, and Stress‐Migration
      5. 13.5 Failure Analysis in Mobile Technology
      6. Problems
      7. References
    6. 14 Artificial Intelligence in Electronic Packaging Reliability
      1. 14.1 Introduction
      2. 14.2 To Change Time‐Dependent Event to Time‐Independent Event
      3. 14.3 To Deduce MTTF from Mean Microstructure Change to Failure
      4. 14.4 Summary
  9. Index
  10. End User License Agreement

Product information

  • Title: Electronic Packaging Science and Technology
  • Author(s): King-Ning Tu, Chih Chen, Hung-Ming Chen
  • Release date: December 2021
  • Publisher(s): Wiley
  • ISBN: 9781119418313