Appendix JDiode/BJT/FET
J.1 Diode
The junction (depletion) and diffusion capacitances are
Table J.1 PSpice model parameters of diode.
SPICE name | Model parameter | Default value |
IS | Transport saturation current Is | 10−14 |
RS | Ohmic (series) resistance Rs | 0 [Ω] |
N | Emission (ideality) coefficient η | 1 |
CJO | Zero‐bias junction capacitance Cj0 | 0 |
VJ | PN junction (built‐in) potential ϕB | 1 [V] |
MJ | PN grading coefficient m | 0.5 |
TT | Transit time τt | 0 [s] |
BV | Reverse breakdown voltage VZ | ∞ [V] |
IBV | Reverse breakdown current IZ | 10−3 |
J.2 BJT (Bipolar Junction Transistor)
- gm: transconductance (gain)
(J.2)(J.3)
- Cbe/Cbc: zero‐bias B‐E/B‐C junction capacitances
(J.4)
- Cbe0(CJE)/Cbc0(CJC): zero‐bias B‐E/B‐C ...
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