Advances in Non-volatile Memory and Storage Technology

14

Ferroelectric random access memory (FRAM) devices

T. Eshita and T. Tamura,    Fujitsu Semiconductor Ltd, Japan

Y. Arimoto,    Fujitsu Laboratories Ltd, Japan

Abstract:

We review the history of, and recent advances in, ferroelectric memory, including ferroelectric random access memory (FRAM or FeRAM). FRAM is the first among advanced non-volatile memories, such as magnetoresistive random-access memory (MRAM), phase-change random access memory (PRAM) and resistive random access memory (ReRAM), to be commercialized. Highly reliable FRAM with a memory density of a few Mb is currently available. Since FRAM has excellent electric properties, such as a high speed read/write (< 50 ns), high switching endurance ( 10¹³) and low power consumption, it has ...