Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures
G. Molas and L. Masoero, CEA-LETI, France,
V. Della Marca, STMicroelectronics, France
G. Gay and B. De Salvo, CEA-LETI, France
Abstract:
This chapter presents an overview of the charge trap, silicon nanocrystals and split-gate memory technologies, which are currently envisaged as promising solutions to solve the scaling issues of standard embedded Flash memory technologies. In particular, we will focus on the main features allowing improved performance and scaling perspectives. We will also discuss in detail the main key challenges of these promising emerging technologies with particular focus ...
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